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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
G3S06508B SIC SCHOTTKY DIODE 650V 8A 3-PIN Global Power Technology-GPT	3870	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	14A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G3S06512B SIC SCHOTTKY DIODE 650V 12A 3-PI Global Power Technology-GPT	2132	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	27A (DC)	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G3S12004B SIC SCHOTTKY DIODE 1200V 4A 3-PI Global Power Technology-GPT	3052	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	8.5A (DC)	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S06510B SIC SCHOTTKY DIODE 650V 10A 3-PI Global Power Technology-GPT	2864	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	27A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
AS3D020120P2 1200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED	3162	- + Añadir Investigación	Datasheet	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	30A (DC)	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	-55°C ~ 175°C	Through Hole
DPAD10 TO-72 4L LOW LEAKAGE, MONOLITHIC DUAL, PI Linear Integrated Systems, Inc.	3994	- + Añadir Investigación	Datasheet	Bulk	DPAD	Active	2 Independent	Standard	45 V	50mA	1.5 V @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	10 pA @ 20 V	-55°C ~ 150°C	Through Hole
G4S06516BT SIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT	3219	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	25.9A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
DPAD50 TO-72 4L LOW LEAKAGE, MONOLITHIC DUAL, PI Linear Integrated Systems, Inc.	2735	- + Añadir Investigación	Datasheet	Bulk	DPAD	Active	2 Independent	Standard	45 V	50mA	1.5 V @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	50 pA @ 20 V	-55°C ~ 150°C	Through Hole
G3S12006B SIC SCHOTTKY DIODE 1200V 6A 3-PI Global Power Technology-GPT	2610	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	14A (DC)	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S06516B SIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT	3394	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	25.5A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G4S06520BT SIC SCHOTTKY DIODE 650V 20A 3-PI Global Power Technology-GPT	3140	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	31.2A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
AS3D040120P2 1200V,40A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED	3518	- + Añadir Investigación	Datasheet	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	52A (DC)	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12016B SIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT	2171	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	27.9A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12010BM SIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT	2302	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	19.35A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12016BM SIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT	2995	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	27.9A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S12010BM SIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT	2069	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	19.8A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S12010B SIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT	3360	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	39A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G4S06530BT SIC SCHOTTKY DIODE 650V 30A 3-PI Global Power Technology-GPT	2591	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	39A (DC)	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G5S12020BM SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT	2878	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	33A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S12020B SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT	2614	- + Añadir Investigación	Datasheet	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	37A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole

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