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Photo Mfr. Part # Stock Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
MBRF10H60-E3/45

MBRF10H60-E3/45

DIODE SCHOTTKY 60V 10A ITO220AC

Vishay General Semiconductor - Diodes Division

2068
- +

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Investigación

MBRF10H60-E3/45

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 60 V 60 V 10A -65°C ~ 175°C 710 mV @ 10 A
RG 2A

RG 2A

DIODE GEN PURP 600V 1A AXIAL

Sanken

2317
- +

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Investigación

RG 2A

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 100 ns 500 µA @ 600 V 600 V 1A -40°C ~ 150°C 2 V @ 1 A
UH10JT-E3/4W

UH10JT-E3/4W

DIODE GEN PURP 600V 10A TO220AC

Vishay General Semiconductor - Diodes Division

3378
- +

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Investigación

UH10JT-E3/4W

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 25 ns - 600 V 10A -55°C ~ 175°C -
JANTX1N647-1

JANTX1N647-1

DIODE GEN PURP 400V 400MA DO35

Microchip Technology

3940
- +

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Investigación

JANTX1N647-1

Datasheet

Bulk Military, MIL-PRF-19500/240 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 nA @ 400 V 400 V 400mA -65°C ~ 175°C 1 V @ 400 mA
GP10Q-M3/54

GP10Q-M3/54

DIODE GEN PURP 1.2KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

3567
- +

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Investigación

GP10Q-M3/54

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 7pF @ 4V, 1MHz 3 µs 5 µA @ 1200 V 1200 V 1A -65°C ~ 150°C 1.1 V @ 1 A
EGP10CE-M3/73

EGP10CE-M3/73

DIODE GEN PURP 150V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2016
- +

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Investigación

EGP10CE-M3/73

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 150 V 150 V 1A -65°C ~ 150°C 950 mV @ 1 A
MBRF10H60HE3/45

MBRF10H60HE3/45

DIODE SCHOTTKY 60V 10A ITO220AC

Vishay General Semiconductor - Diodes Division

3378
- +

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Investigación

MBRF10H60HE3/45

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 60 V 60 V 10A -65°C ~ 175°C 710 mV @ 10 A
RG 4C

RG 4C

DIODE GEN PURP 1KV 2A AXIAL

Sanken

2841
- +

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Investigación

RG 4C

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 100 ns 500 µA @ 1000 V 1000 V 2A -40°C ~ 150°C 3 V @ 2 A
UH5JT-E3/4W

UH5JT-E3/4W

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division

2070
- +

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Investigación

UH5JT-E3/4W

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 40 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 3 V @ 5 A
JANTXV1N647-1

JANTXV1N647-1

DIODE GEN PURP 400V 400MA DO35

Microchip Technology

3829
- +

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Investigación

JANTXV1N647-1

Datasheet

Bulk Military, MIL-PRF-19500/240 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 nA @ 400 V 400 V 400mA -65°C ~ 175°C 1 V @ 400 mA
GP10THM3/54

GP10THM3/54

DIODE GEN PURP 1.3KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

2934
- +

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Investigación

GP10THM3/54

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 5pF @ 4V, 1MHz 3 µs 5 µA @ 1300 V 1300 V 1A -65°C ~ 150°C 1.1 V @ 1 A
EGP10CHM3/73

EGP10CHM3/73

DIODE GEN PURP 150V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3185
- +

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Investigación

EGP10CHM3/73

Datasheet

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 150 V 150 V 1A -65°C ~ 150°C 950 mV @ 1 A
MBRF10H90-E3/45

MBRF10H90-E3/45

DIODE SCHOTTKY 90V 10A ITO220AC

Vishay General Semiconductor - Diodes Division

3120
- +

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Investigación

MBRF10H90-E3/45

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 4.5 µA @ 90 V 90 V 10A -65°C ~ 175°C 770 mV @ 10 A
RH 1A

RH 1A

DIODE GEN PURP 600V 600MA AXIAL

Sanken

2045
- +

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Investigación

RH 1A

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - 4 µs 5 µA @ 600 V 600 V 600mA -40°C ~ 150°C 1.3 V @ 600 mA
UHF10JT-E3/45

UHF10JT-E3/45

DIODE GEN PURP 600V 10A ITO220AC

Vishay General Semiconductor - Diodes Division

2867
- +

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Investigación

UHF10JT-E3/45

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 25 ns - 600 V 10A -55°C ~ 175°C -
JAN1N649-1

JAN1N649-1

DIODE GEN PURP 600V 400MA DO35

Microchip Technology

2200
- +

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Investigación

JAN1N649-1

Datasheet

Bulk Military, MIL-PRF-19500/240 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 nA @ 600 V 600 V 400mA -65°C ~ 175°C 1 V @ 400 mA
GP10T-M3/54

GP10T-M3/54

DIODE GEN PURP 1.3KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

2397
- +

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Investigación

GP10T-M3/54

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 5pF @ 4V, 1MHz 3 µs 5 µA @ 1300 V 1300 V 1A -65°C ~ 150°C 1.1 V @ 1 A
EGP10C-M3/73

EGP10C-M3/73

DIODE GEN PURP 150V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3385
- +

Añadir

Investigación

EGP10C-M3/73

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 150 V 150 V 1A -65°C ~ 150°C 950 mV @ 1 A
MBRF1635HE3/45

MBRF1635HE3/45

DIODE SCHOTTKY 35V 16A ITO220AC

Vishay General Semiconductor - Diodes Division

3736
- +

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Investigación

MBRF1635HE3/45

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 35 V 35 V 16A -65°C ~ 150°C 630 mV @ 16 A
UHF5JT-E3/4W

UHF5JT-E3/4W

DIODE GEN PURP 600V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

2524
- +

Añadir

Investigación

UHF5JT-E3/4W

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 40 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 3 V @ 5 A
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