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Photo Mfr. Part # Stock Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
MBR5200VPBTR-G1

MBR5200VPBTR-G1

DIODE SCHOTTKY 200V 5A DO27

Diodes Incorporated

2175
- +

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Investigación

MBR5200VPBTR-G1

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 500 µA @ 200 V 200 V 5A -65°C ~ 150°C 950 mV @ 5 A
RFN3B2STL

RFN3B2STL

DIODE GEN PURPOSE CPD

Rohm Semiconductor

2279
- +

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Investigación

Tape & Reel (TR) RoHS - - Obsolete - - - - - - - -
RM 10Z

RM 10Z

DIODE GEN PURP 200V 1.5A AXIAL

Sanken

2870
- +

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Investigación

RM 10Z

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 200 V 200 V 1.5A -40°C ~ 150°C 910 mV @ 1.5 A
UF1BHR1G

UF1BHR1G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

3513
- +

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Investigación

UF1BHR1G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
IDL06G65C5XUMA1

IDL06G65C5XUMA1

DIODE SCHOTTKY 650V 6A VSON-4

Infineon Technologies

2954
- +

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Investigación

IDL06G65C5XUMA1

Datasheet

Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 190pF @ 1V, 1MHz 0 ns 110 µA @ 650 V 650 V 6A (DC) -55°C ~ 150°C 1.7 V @ 6 A
APT20SCD65K

APT20SCD65K

DIODE SILICON 650V 32A TO220

Microchip Technology

2233
- +

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Investigación

APT20SCD65K

Datasheet

Bulk RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 680pF @ 100mV, 1MHz 0 ns 400 µA @ 650 V 650 V 32A -55°C ~ 150°C 1.8 V @ 20 A
MBR5200VPC-E1

MBR5200VPC-E1

DIODE SCHOTTKY 200V 5A DO27

Diodes Incorporated

2303
- +

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Investigación

MBR5200VPC-E1

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 500 µA @ 200 V 200 V 5A -65°C ~ 150°C 950 mV @ 5 A
RFN3B6STL

RFN3B6STL

DIODE GEN PURPOSE CPD

Rohm Semiconductor

2814
- +

Añadir

Investigación

Tape & Reel (TR) RoHS - - Obsolete - - - - - - - -
RM 11A

RM 11A

DIODE GEN PURP 600V 1.2A AXIAL

Sanken

3162
- +

Añadir

Investigación

RM 11A

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 600 V 600 V 1.2A -40°C ~ 150°C 920 mV @ 1.5 A
UF1D R1G

UF1D R1G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3368
- +

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Investigación

UF1D R1G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
IDL08G65C5XUMA1

IDL08G65C5XUMA1

DIODE SCHOTTKY 650V 8A VSON-4

Infineon Technologies

3352
- +

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Investigación

IDL08G65C5XUMA1

Datasheet

Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 250pF @ 1V, 1MHz 0 ns 140 µA @ 650 V 650 V 8A (DC) -55°C ~ 150°C 1.7 V @ 8 A
TRS10E65C,S1Q

TRS10E65C,S1Q

DIODE SCHOTTKY 650V 10A TO220-2L

Toshiba Semiconductor and Storage

2657
- +

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Investigación

TRS10E65C,S1Q

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole - 0 ns 90 µA @ 650 V 650 V 10A (DC) 175°C (Max) 1.7 V @ 10 A
MBR5200VPTR-G1

MBR5200VPTR-G1

DIODE SCHOTTKY 200V 5A DO27

Diodes Incorporated

3230
- +

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Investigación

MBR5200VPTR-G1

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 500 µA @ 200 V 200 V 5A -65°C ~ 150°C 950 mV @ 5 A
RFN5B2STL

RFN5B2STL

DIODE GEN PURPOSE CPD

Rohm Semiconductor

2180
- +

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Investigación

RFN5B2STL

Datasheet

Tape & Reel (TR) RoHS - - Obsolete - - - - - - - -
RM 11B

RM 11B

DIODE GEN PURP 800V 1.2A AXIAL

Sanken

3209
- +

Añadir

Investigación

RM 11B

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 10 µA @ 800 V 800 V 1.2A -40°C ~ 150°C 920 mV @ 1.5 A
UF1DHR1G

UF1DHR1G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3506
- +

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Investigación

UF1DHR1G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
IDL10G65C5XUMA1

IDL10G65C5XUMA1

DIODE SCHOTTKY 650V 10A VSON-4

Infineon Technologies

3900
- +

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Investigación

IDL10G65C5XUMA1

Datasheet

Tape & Reel (TR) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 300pF @ 1V, 1MHz 0 ns 180 µA @ 650 V 650 V 10A (DC) -55°C ~ 150°C 1.7 V @ 10 A
SBR1U30CSP-7

SBR1U30CSP-7

DIODE SBR 30V 1A 2CSP

Diodes Incorporated

2985
- +

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Investigación

SBR1U30CSP-7

Datasheet

Tape & Reel (TR),Cut Tape (CT) SBR® RoHS Fast Recovery =< 500ns, > 200mA (Io) Super Barrier Obsolete Surface Mount 80pF @ 4V, 1MHz - 75 µA @ 30 V 30 V 1A -55°C ~ 150°C 480 mV @ 1 A
MBR5H150VP-E1

MBR5H150VP-E1

DIODE SCHOTTKY 150V 5A DO27

Diodes Incorporated

3223
- +

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Investigación

MBR5H150VP-E1

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 8 µA @ 150 V 150 V 5A 175°C (Max) 920 mV @ 5 A
RFN5B3STL

RFN5B3STL

DIODE GEN PURPOSE CPD

Rohm Semiconductor

3161
- +

Añadir

Investigación

RFN5B3STL

Datasheet

Tape & Reel (TR) RoHS - - Obsolete - - - - - - - -
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