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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
1N4936G A0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3208	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
N6075D DIODE Diodes Incorporated	2803	- + Añadir Investigación		Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
UF1503S-B DIODE GEN PURP 200V 1.5A DO41 Diodes Incorporated	2394	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	1.5A	-65°C ~ 150°C	1 V @ 1.5 A
SF64GHA0G DIODE GEN PURP 200V 6A DO201AD Taiwan Semiconductor Corporation	3562	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	6A	-55°C ~ 150°C	975 mV @ 6 A
HERAF1603G C0G DIODE GEN PURP 200V 16A ITO220AC Taiwan Semiconductor Corporation	2625	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	1 V @ 16 A
MBRF10200HC0G DIODE SCHOTTKY 200V 10A ITO220AC Taiwan Semiconductor Corporation	2442	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	10A	-55°C ~ 150°C	1.05 V @ 10 A
1N4936GHA0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	2334	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
N6180D DIODE Diodes Incorporated	2346	- + Añadir Investigación		Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
UF1504S-B DIODE GEN PURP 400V 1.5A DO41 Diodes Incorporated	2726	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1.5A	-65°C ~ 150°C	1.3 V @ 1.5 A
SF65G A0G DIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation	2592	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	6A	-55°C ~ 150°C	1.3 V @ 6 A
HERAF1604G C0G DIODE GEN PURP 300V 16A ITO220AC Taiwan Semiconductor Corporation	2781	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1 V @ 16 A
MBRF1035 C0G DIODE SCHOTTKY 35V 10A ITO220AC Taiwan Semiconductor Corporation	2129	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 35 V	35 V	10A	-55°C ~ 150°C	700 mV @ 10 A
1N4937G A0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2301	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
N6200D DIODE Diodes Incorporated	3120	- + Añadir Investigación		Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
UF1505S-B DIODE GEN PURP 600V 1.5A DO41 Diodes Incorporated	2695	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 600 V	600 V	1.5A	-65°C ~ 150°C	1.7 V @ 1.5 A
SF65GHA0G DIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation	2116	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	6A	-55°C ~ 150°C	1.3 V @ 6 A
HERAF1605G C0G DIODE GEN PURP 400V 16A ITO220AC Taiwan Semiconductor Corporation	2496	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	16A	-55°C ~ 150°C	1.3 V @ 16 A
1N4937GHA0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2132	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
MBRF1035HC0G DIODE SCHOTTKY 35V 10A ITO220AC Taiwan Semiconductor Corporation	3171	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 35 V	35 V	10A	-55°C ~ 150°C	700 mV @ 10 A
N6270D DIODE Diodes Incorporated	3460	- + Añadir Investigación		Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-

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