España Hola! Bienvenido a visitar Шэньчжэньская микроэлектронная компания Хунтай !

Carrito de compras

Proyecto (S)
Photo Mfr. Part # Stock Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SR1503 B0G

SR1503 B0G

DIODE SCHOTTKY 30V 15A R-6

Taiwan Semiconductor Corporation

2191
- +

Añadir

Investigación

SR1503 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 15A -50°C ~ 150°C 550 mV @ 15 A
ES3FHM6G

ES3FHM6G

DIODE GEN PURP 300V 3A DO214AB

Taiwan Semiconductor Corporation

2483
- +

Añadir

Investigación

ES3FHM6G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.3 V @ 3 A
SK29A M2G

SK29A M2G

DIODE SCHOTTKY 90V 2A DO214AC

Taiwan Semiconductor Corporation

3842
- +

Añadir

Investigación

SK29A M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
SF64G B0G

SF64G B0G

DIODE GEN PURP 200V 6A DO201AD

Taiwan Semiconductor Corporation

3762
- +

Añadir

Investigación

SF64G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 6A -55°C ~ 150°C 975 mV @ 6 A
FR155G B0G

FR155G B0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation

3284
- +

Añadir

Investigación

FR155G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2001GHC0G

SFAF2001GHC0G

DIODE GEN PURP 50V 20A ITO220AC

Taiwan Semiconductor Corporation

3134
- +

Añadir

Investigación

SFAF2001GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR1503HB0G

SR1503HB0G

DIODE SCHOTTKY 30V 15A R-6

Taiwan Semiconductor Corporation

3818
- +

Añadir

Investigación

SR1503HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 15A -50°C ~ 150°C 550 mV @ 15 A
ES3G M6G

ES3G M6G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation

3688
- +

Añadir

Investigación

ES3G M6G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
SK29AHM2G

SK29AHM2G

DIODE SCHOTTKY 90V 2A DO214AC

Taiwan Semiconductor Corporation

2987
- +

Añadir

Investigación

SK29AHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
SF64GHB0G

SF64GHB0G

DIODE GEN PURP 200V 6A DO201AD

Taiwan Semiconductor Corporation

3872
- +

Añadir

Investigación

SF64GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 6A -55°C ~ 150°C 975 mV @ 6 A
FR155GHB0G

FR155GHB0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation

2397
- +

Añadir

Investigación

FR155GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2002G C0G

SFAF2002G C0G

DIODE GEN PURP 100V 20A ITO220AC

Taiwan Semiconductor Corporation

2369
- +

Añadir

Investigación

SFAF2002G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR1504 B0G

SR1504 B0G

DIODE SCHOTTKY 40V 15A R-6

Taiwan Semiconductor Corporation

2656
- +

Añadir

Investigación

SR1504 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 15A -50°C ~ 150°C 550 mV @ 15 A
SK32A M2G

SK32A M2G

DIODE SCHOTTKY 20V 3A DO214AC

Taiwan Semiconductor Corporation

2173
- +

Añadir

Investigación

SK32A M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 150°C 550 mV @ 3 A
SF65G B0G

SF65G B0G

DIODE GEN PURP 300V 6A DO201AD

Taiwan Semiconductor Corporation

2897
- +

Añadir

Investigación

SF65G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 6A -55°C ~ 150°C 1.3 V @ 6 A
FR156G B0G

FR156G B0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation

3966
- +

Añadir

Investigación

FR156G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2002GHC0G

SFAF2002GHC0G

DIODE GEN PURP 100V 20A ITO220AC

Taiwan Semiconductor Corporation

3138
- +

Añadir

Investigación

SFAF2002GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR1504HB0G

SR1504HB0G

DIODE SCHOTTKY 40V 15A R-6

Taiwan Semiconductor Corporation

3792
- +

Añadir

Investigación

SR1504HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 15A -50°C ~ 150°C 550 mV @ 15 A
SK32AHM2G

SK32AHM2G

DIODE SCHOTTKY 20V 3A DO214AC

Taiwan Semiconductor Corporation

3545
- +

Añadir

Investigación

SK32AHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 150°C 550 mV @ 3 A
SF65GHB0G

SF65GHB0G

DIODE GEN PURP 300V 6A DO201AD

Taiwan Semiconductor Corporation

2351
- +

Añadir

Investigación

SF65GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 6A -55°C ~ 150°C 1.3 V @ 6 A
Total 50121 Records«Prev1... 16511652165316541655165616571658...2507Next»
Solicitud de cotización
Número de pieza
Cantidad
Contacto
Correo electrónico
Empresa
Comentarios