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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
BYV30B-600PJ DIODE GEN PURP 600V 30A D2PAK WeEn Semiconductors	3841	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.55 V @ 30 A
ES3A V6G DIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation	2982	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	-
BAS21/8VL DIODE GP 250V 200MA TO236AB Nexperia USA Inc.	3388	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Obsolete	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 200 V	250 V	200mA (DC)	150°C (Max)	1.25 V @ 200 mA
JANTXV1N6772 RECTIFIER Microchip Technology	3993	- + Añadir Investigación		Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	200pF @ 5V, 1MHz	60 ns	10 µA @ 320 V	400 V	8A (DC)	-	1.6 V @ 8 A
UF1K A0G DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation	3802	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
2A01GHA0G DIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation	3032	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 50 V	50 V	2A	-55°C ~ 150°C	1.1 V @ 2 A
BYV30JT-600PQ DIODE GEN PURP 600V 30A TO-3P WeEn Semiconductors	3752	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.8 V @ 30 A
ES3A V7G DIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation	3664	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	-
BAS321/8X DIODE GEN PURP 200V 250MA SOD323 Nexperia USA Inc.	3066	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	2pF @ 0V, 1MHz	50 ns	100 nA @ 200 V	200 V	250mA (DC)	150°C (Max)	1.25 V @ 200 mA
JANTXV1N6772R RECTIFIER Microchip Technology	2337	- + Añadir Investigación		Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	200pF @ 5V, 1MHz	60 ns	10 µA @ 320 V	400 V	8A (DC)	-	1.6 V @ 8 A
UF1KHA0G DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation	2489	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
2A02G A0G DIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation	3432	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 100 V	100 V	2A	-55°C ~ 150°C	1.1 V @ 2 A
BYV30W-600PQ DIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors	3695	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.55 V @ 30 A
ES3B V6G DIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation	2179	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	3A	-55°C ~ 150°C	-
BYC30-1200PQ DIODE GEN PURP 1.2KV 30A TO220AC WeEn Semiconductors	3808	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	250 µA @ 1200 V	1200 V	30A	175°C (Max)	3.3 V @ 30 A
JANTXV1N6773 RECTIFIER Microchip Technology	2502	- + Añadir Investigación		Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	200pF @ 5V, 1MHz	60 ns	10 µA @ 480 V	600 V	8A (DC)	-	1.6 V @ 8 A
UF1M A0G DIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation	3089	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	-	1A	-55°C ~ 150°C	1.7 V @ 1 A
2A02GHA0G DIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation	3939	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 100 V	100 V	2A	-55°C ~ 150°C	1.1 V @ 2 A
BYV30X-600PQ DIODE GEN PURP 600V 30A TO220F WeEn Semiconductors	2429	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.55 V @ 30 A
ES3B V7G DIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation	2325	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	3A	-55°C ~ 150°C	-

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