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Photo Mfr. Part # Stock Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
S4K R6G

S4K R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2915
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 800 V 800 V 4A -55°C ~ 150°C 1.15 V @ 4 A
6A100G B0G

6A100G B0G

DIODE GEN PURP 6A R-6

Taiwan Semiconductor Corporation

2871
- +

Añadir

Investigación

6A100G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 6A -55°C ~ 150°C 1 V @ 6 A
S3A R6

S3A R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3610
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1.15 V @ 3 A
6A100GHB0G

6A100GHB0G

DIODE GEN PURP 6A R-6

Taiwan Semiconductor Corporation

3438
- +

Añadir

Investigación

6A100GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 6A -55°C ~ 150°C 1 V @ 6 A
SK56C R6G

SK56C R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2360
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 750 mV @ 5 A
6A10G B0G

6A10G B0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

3484
- +

Añadir

Investigación

6A10G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz - 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1.1 V @ 6 A
ES3D R7

ES3D R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2343
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
6A10GHB0G

6A10GHB0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

3260
- +

Añadir

Investigación

6A10GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1.1 V @ 6 A
MUR360S M6

MUR360S M6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3272
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 50 ns 10 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.25 V @ 3 A
6A20G B0G

6A20G B0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

2582
- +

Añadir

Investigación

6A20G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
S12MC M6

S12MC M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3092
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 12A (DC) -55°C ~ 150°C 1.1 V @ 12 A
6A20GHB0G

6A20GHB0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

3715
- +

Añadir

Investigación

6A20GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
SK83C R6G

SK83C R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3299
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 30 V 30 V 8A (DC) -55°C ~ 125°C 550 mV @ 8 A
6A40G B0G

6A40G B0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

3351
- +

Añadir

Investigación

6A40G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3B R7

RS3B R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2857
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.3 V @ 3 A
6A40GHB0G

6A40GHB0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

2232
- +

Añadir

Investigación

6A40GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1 V @ 6 A
HS5B R7

HS5B R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2590
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
6A60G B0G

6A60G B0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

2252
- +

Añadir

Investigación

6A60G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1 V @ 6 A
S5D R6

S5D R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3490
- +

Añadir

Investigación

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 200 V 200 V 5A -55°C ~ 150°C 1.15 V @ 5 A
6A60GHB0G

6A60GHB0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

2694
- +

Añadir

Investigación

6A60GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1 V @ 6 A
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