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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
RSFJLHRHG DIODE GEN PURP 600V 500MA SUBSMA Taiwan Semiconductor Corporation	2478	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	250 ns	5 µA @ 600 V	600 V	500mA	-55°C ~ 150°C	1.3 V @ 500 mA
VSB3200S-M3/73 DIODE SCHOTTKY 200V 3A DO204AC Vishay General Semiconductor - Diodes Division	3325	- + Añadir Investigación		Tape & Box (TB)	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Through Hole	170pF @ 4V, 1MHz	-	50 µA @ 200 V	200 V	3A	-40°C ~ 150°C	1.4 V @ 3 A
TSPB20U80S S2G DIODE SCHOTTKY 80V 20A SMPC4.0 Taiwan Semiconductor Corporation	3193	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	300 µA @ 80 V	80 V	20A	-55°C ~ 150°C	640 mV @ 20 A
RJU6052TDPP-EJ#T2 DIODE GEN PURP 600V 10A TO220FP Renesas Electronics America Inc	3989	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	-	25 ns	1 µA @ 600 V	600 V	10A (DC)	150°C (Max)	3 V @ 10 A
1N5817 R1G DIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation	2367	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 20 V	20 V	1A	-55°C ~ 125°C	450 mV @ 1 A
VS-20ETF06STRLPBF DIODE GEN PURP 600V 20A D2PAK Vishay General Semiconductor - Diodes Division	3868	- + Añadir Investigación	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	-	120 ns	100 µA @ 600 V	600 V	20A	-40°C ~ 150°C	1.05 V @ 15 A
RSFKL RHG DIODE GEN PURP 800V 500MA SUBSMA Taiwan Semiconductor Corporation	2239	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	500 ns	5 µA @ 800 V	800 V	500mA	-55°C ~ 150°C	1.3 V @ 500 mA
VS-10ETF02STRLPBF DIODE GEN PURP 200V 10A D2PAK Vishay General Semiconductor - Diodes Division	3592	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	-	200 ns	100 µA @ 200 V	200 V	10A	-40°C ~ 150°C	1.2 V @ 10 A
TSPB5H120S S2G DIODE SCHOTTKY 120V 5A SMPC4.0 Taiwan Semiconductor Corporation	3243	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	150 µA @ 120 V	120 V	5A	-55°C ~ 150°C	740 mV @ 5 A
RJU60C3TDPP-EJ#T2 DIODE GEN PURP 600V 10A TO220FP Renesas Electronics America Inc	3437	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	90 ns	1 µA @ 600 V	600 V	10A	150°C (Max)	2.1 V @ 30 A
1N5817HR1G DIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation	3458	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 20 V	20 V	1A	-55°C ~ 125°C	450 mV @ 1 A
VS-20ETS08STRLPBF DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division	2978	- + Añadir Investigación	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 800 V	800 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
RSFKLHRHG DIODE GEN PURP 800V 500MA SUBSMA Taiwan Semiconductor Corporation	2516	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	500 ns	5 µA @ 800 V	800 V	500mA	-55°C ~ 150°C	1.3 V @ 500 mA
VS-10ETF02STRRPBF DIODE GEN PURP 200V 10A D2PAK Vishay General Semiconductor - Diodes Division	3647	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	-	200 ns	100 µA @ 200 V	200 V	10A	-40°C ~ 150°C	1.2 V @ 10 A
1N5391G R0G DIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation	2684	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 50 V	50 V	1.5A	-55°C ~ 150°C	1.1 V @ 1.5 A
RJU6053TDPP-EJ#T2 DIODE GEN PURP 600V 20A TO220FP Renesas Electronics America Inc	2483	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	-	25 ns	1 µA @ 600 V	600 V	20A (DC)	150°C (Max)	3 V @ 20 A
1N5818 R1G DIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation	2360	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 30 V	30 V	1A	-55°C ~ 125°C	550 mV @ 1 A
VS-20ETS12STRLPBF DIODE GEN PURP 1.2KV 20A D2PAK Vishay General Semiconductor - Diodes Division	2350	- + Añadir Investigación	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 1200 V	1200 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
RSFML RHG DIODE GEN PURP 500MA SUB SMA Taiwan Semiconductor Corporation	2672	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	500 ns	5 µA @ 1000 V	-	500mA	-55°C ~ 150°C	1.3 V @ 500 mA
VS-10ETF04STRLPBF DIODE GEN PURP 400V 10A TO263AB Vishay General Semiconductor - Diodes Division	2309	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	-	200 ns	100 µA @ 400 V	400 V	10A	-40°C ~ 150°C	1.2 V @ 10 A

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