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Photo Mfr. Part # Stock Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-10ETF12STRRPBF

VS-10ETF12STRRPBF

DIODE GEN PURP 1.2KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

2403
- +

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Investigación

VS-10ETF12STRRPBF

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 310 ns 100 µA @ 1200 V 1200 V 10A -40°C ~ 150°C 1.33 V @ 10 A
1N5401G R0G

1N5401G R0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3112
- +

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Investigación

1N5401G R0G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 25pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.1 V @ 3 A
BA159G R1G

BA159G R1G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

2351
- +

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Investigación

BA159G R1G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.2 V @ 1 A
CLH03(TE16R,Q)

CLH03(TE16R,Q)

DIODE GEN PURP 400V 3A L-FLAT

Toshiba Semiconductor and Storage

2420
- +

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Investigación

CLH03(TE16R,Q)

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns - 400 V 3A (DC) - -
S1GL RHG

S1GL RHG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

3048
- +

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Investigación

S1GL RHG

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
UH6PD-M3/86A

UH6PD-M3/86A

DIODE GEN PURP 200V 6A TO277A

Vishay General Semiconductor - Diodes Division

3977
- +

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Investigación

UH6PD-M3/86A

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 80pF @ 4V, 1MHz 140 ns 10 µA @ 200 V 200 V 6A -55°C ~ 175°C 1.05 V @ 6 A
VS-10ETS08STRRPBF

VS-10ETS08STRRPBF

DIODE GEN PURP 800V 10A TO263AB

Vishay General Semiconductor - Diodes Division

2742
- +

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Investigación

VS-10ETS08STRRPBF

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 500 µA @ 800 V 800 V 10A -40°C ~ 150°C 1.1 V @ 10 A
1N5401GHR0G

1N5401GHR0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3780
- +

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Investigación

1N5401GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 25pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.1 V @ 3 A
BA159GHR1G

BA159GHR1G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

2675
- +

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Investigación

BA159GHR1G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.2 V @ 1 A
CLH05(T6L,NKOD,Q)

CLH05(T6L,NKOD,Q)

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage

2036
- +

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Investigación

CLH05(T6L,NKOD,Q)

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 200 V 200 V 5A (DC) -40°C ~ 150°C 980 mV @ 5 A
S1GLHRHG

S1GLHRHG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

2154
- +

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Investigación

S1GLHRHG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
UH6PJHM3/86A

UH6PJHM3/86A

DIODE GEN PURP 600V 6A TO277A

Vishay General Semiconductor - Diodes Division

2661
- +

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Investigación

UH6PJHM3/86A

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 30pF @ 4V, 1MHz 45 ns 10 µA @ 600 V 600 V 6A -55°C ~ 175°C 3 V @ 6 A
VS-10ETS10STRLPBF

VS-10ETS10STRLPBF

DIODE GEN PURP 1KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

2844
- +

Añadir

Investigación

VS-10ETS10STRLPBF

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 500 µA @ 1000 V 1000 V 10A -40°C ~ 150°C 1.1 V @ 10 A
1N5402GHR0G

1N5402GHR0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

2238
- +

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Investigación

1N5402GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 25pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
FR101G R1G

FR101G R1G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

2657
- +

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Investigación

FR101G R1G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
CLH05(TE16R,Q)

CLH05(TE16R,Q)

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage

2573
- +

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Investigación

CLH05(TE16R,Q)

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 200 V 200 V 5A (DC) -40°C ~ 150°C 0.98 V @ 5 A
S1JL RHG

S1JL RHG

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

2891
- +

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Investigación

S1JL RHG

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.1 V @ 1 A
V10150SHM3/4W

V10150SHM3/4W

DIODE SCHOTTKY 10A 150V TO-220AB

Vishay General Semiconductor - Diodes Division

2735
- +

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Investigación

V10150SHM3/4W

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 150 µA @ 150 V 150 V 10A -40°C ~ 150°C 1.2 V @ 10 A
VS-10ETS10STRRPBF

VS-10ETS10STRRPBF

DIODE GEN PURP 1KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

3004
- +

Añadir

Investigación

VS-10ETS10STRRPBF

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - - 50 µA @ 1000 V 1000 V 10A -40°C ~ 150°C 1.1 V @ 10 A
1T1G R0G

1T1G R0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

2817
- +

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Investigación

1T1G R0G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.1 V @ 1 A
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