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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SS13L MHG DIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation	2411	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	1A	-55°C ~ 125°C	500 mV @ 1 A
BAT43 A0G DIODE SCHOTTKY 30V 200MA DO35 Taiwan Semiconductor Corporation	3380	- + Añadir Investigación		Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Through Hole	7pF @ 1V, 1MHz	5 ns	100 nA @ 25 V	30 V	200mA	-65°C ~ 125°C	450 mV @ 15 mA
MBRF16150 C0G DIODE SCHOTTKY 150V 16A ITO220AC Taiwan Semiconductor Corporation	3663	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 150 V	150 V	16A	-55°C ~ 150°C	950 mV @ 16 A
IDT05S60CHKSA1 DIODE SCHOTTKY 600V TO220-2 Infineon Technologies	2177	- + Añadir Investigación	Datasheet	Tube		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
SFT14GHA0G DIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation	3897	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	950 mV @ 1 A
MBR10200HC0G DIODE GEN PURP 200V 10A TO220AC Taiwan Semiconductor Corporation	2953	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 200 V	200 V	10A	-55°C ~ 150°C	1.05 V @ 10 A
SS13LHM2G DIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation	3072	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	1A	-55°C ~ 125°C	500 mV @ 1 A
BAV19 A0G DIODE GEN PURP 100V 200MA DO35 Taiwan Semiconductor Corporation	2504	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	5pF @ 0V, 1MHz	-	100 nA @ 100 V	100 V	200mA	-55°C ~ 175°C	1.25 V @ 200 mA
MBRF16150HC0G DIODE SCHOTTKY 150V 16A ITO220AC Taiwan Semiconductor Corporation	3304	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	16A	-55°C ~ 150°C	950 mV @ 16 A
IDT06S60CHKSA1 DIODE SCHOTTKY 600V TO220-2 Infineon Technologies	3009	- + Añadir Investigación	Datasheet	Tube		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
SFT15G A0G DIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation	3132	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
MBR1035 C0G DIODE GEN PURP 35V 10A TO220AC Taiwan Semiconductor Corporation	2632	- + Añadir Investigación	Datasheet	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 35 V	35 V	10A	-55°C ~ 150°C	700 mV @ 10 A
SS13LHMHG DIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation	3764	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	1A	-55°C ~ 125°C	500 mV @ 1 A
BAV20 A0G DIODE GEN PURP 150V 200MA DO35 Taiwan Semiconductor Corporation	2924	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	5pF @ 0V, 1MHz	-	100 nA @ 150 V	150 V	200mA	-55°C ~ 175°C	1.25 V @ 200 mA
MBRF1635 C0G DIODE SCHOTTKY 35V 16A ITO220AC Taiwan Semiconductor Corporation	3330	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 35 V	35 V	16A	-55°C ~ 150°C	630 mV @ 16 A
IDT08S60CHKSA1 DIODE SCHOTTKY 600V TO220-2 Infineon Technologies	3876	- + Añadir Investigación	Datasheet	Tube		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
SFT15GHA0G DIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation	3390	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
MBR1035HC0G DIODE GEN PURP 35V 10A TO220AC Taiwan Semiconductor Corporation	3322	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 35 V	35 V	10A	-55°C ~ 150°C	700 mV @ 10 A
SS14L M2G DIODE SCHOTTKY 40V 1A SUB SMA Taiwan Semiconductor Corporation	2438	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 40 V	40 V	1A	-55°C ~ 125°C	550 mV @ 1 A
BAV21 A0G DIODE GEN PURP 250V 200MA DO35 Taiwan Semiconductor Corporation	2226	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	5pF @ 0V, 1MHz	-	100 nA @ 250 V	250 V	200mA	-55°C ~ 175°C	1.25 V @ 200 mA

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