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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SIDC06D60F6X1SA2 DIODE SWITCHING 600V WAFER Infineon Technologies	2356	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	15A (DC)	-40°C ~ 175°C	1.6 V @ 15 A
MUR4L40HA0G DIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation	2689	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
SIDC06D60E6X1SA1 DIODE SWITCHING 600V WAFER Infineon Technologies	2378	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	10A (DC)	-55°C ~ 150°C	1.25 V @ 10 A
MUR4L60 A0G DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation	3821	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 600 V	600 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
SIDC14D60E6X1SA4 DIODE SWITCHING 600V WAFER Infineon Technologies	3974	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	30A (DC)	-55°C ~ 150°C	1.25 V @ 30 A
MUR4L60HA0G DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation	2404	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 600 V	600 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
SIDC09D60E6X1SA3 DIODE SWITCHING 600V WAFER Infineon Technologies	2100	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	150 ns	27 µA @ 600 V	600 V	20A (DC)	-55°C ~ 150°C	1.7 V @ 20 A
P2500M A0G DIODE GEN PURP 1000V 25A P2500 Taiwan Semiconductor Corporation	3288	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 1000 V	-	25A	-50°C ~ 175°C	870 mV @ 5 A
SIDC14D60E6X1SA3 DIODE SWITCHING 600V WAFER Infineon Technologies	2138	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	30A (DC)	-55°C ~ 150°C	1.25 V @ 30 A
P2500MHA0G DIODE GEN PURP 25A P2500 Taiwan Semiconductor Corporation	2829	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 1000 V	-	25A	-50°C ~ 175°C	870 mV @ 5 A
SIDC06D60E6X1SA4 DIODE SWITCHING 600V WAFER Infineon Technologies	3729	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	10A (DC)	-55°C ~ 150°C	1.25 V @ 10 A
SF21G A0G DIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation	2160	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SIDC02D60C8X7SA2 DIODE SWITCHING 600V 6A WAFER Infineon Technologies	3611	- + Añadir Investigación		Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	27 µA @ 600 V	600 V	6A (DC)	-40°C ~ 175°C	1.95 V @ 6 A
SF21GHA0G DIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation	3575	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SIDC09D60F6X1SA5 DIODE SWITCHING 600V WAFER Infineon Technologies	3043	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	30A (DC)	-40°C ~ 175°C	1.6 V @ 30 A
SF22G A0G DIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation	2491	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SIDC04D60F6X1SA2 DIODE SWITCHING 600V WAFER Infineon Technologies	3327	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	9A (DC)	-40°C ~ 175°C	1.6 V @ 9 A
SF22GHA0G DIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation	3159	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SIDC14D60C8X1SA3 DIODE GEN PURP 600V 50A WAFER Infineon Technologies	3817	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	27 µA @ 600 V	600 V	50A (DC)	-40°C ~ 175°C	1.9 V @ 50 A
SF23G A0G DIODE GEN PURP 150V 2A DO204AC Taiwan Semiconductor Corporation	3607	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	2A	-55°C ~ 150°C	950 mV @ 2 A

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