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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SIDC05D60C8X1SA1 DIODE GEN PURP 600V 15A WAFER Infineon Technologies	2582	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	27 µA @ 600 V	600 V	15A (DC)	-40°C ~ 175°C	1.95 V @ 15 A
SF23GHA0G DIODE GEN PURP 150V 2A DO204AC Taiwan Semiconductor Corporation	2091	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SIDC23D60E6X1SA1 DIODE SWITCHING 600V WAFER Infineon Technologies	2707	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	50A (DC)	-55°C ~ 150°C	1.25 V @ 50 A
SF24GHA0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	3262	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SIDC38D60C8X1SA1 DIODE GEN PURP 600V 150A WAFER Infineon Technologies	2190	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	27 µA @ 600 V	600 V	150A (DC)	-40°C ~ 150°C	1.9 V @ 150 A
SF25G A0G DIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation	3162	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
SIDC23D60E6X1SA5 DIODE SWITCHING 600V WAFER Infineon Technologies	3242	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	50A (DC)	-55°C ~ 150°C	1.25 V @ 50 A
SF25GHA0G DIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation	2725	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
SIDC07D60F6X1SA5 DIODE SWITCHING 600V WAFER Infineon Technologies	3896	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	22.5A (DC)	-40°C ~ 175°C	1.6 V @ 22.5 A
SF26GHA0G DIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation	3307	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
SIDC07D60F6X7SA1 DIODE SWITCHING 600V WAFER Infineon Technologies	2847	- + Añadir Investigación		Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	22.5A (DC)	-40°C ~ 175°C	1.6 V @ 22.5 A
SF27G A0G DIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation	2315	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SIDC14D60F6X1SA3 DIODE SWITCHING 600V WAFER Infineon Technologies	3032	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	45A (DC)	-40°C ~ 175°C	1.6 V @ 45 A
SF27GHA0G DIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation	2218	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SIDC26D60C8X1SA1 DIODE GEN PURP 600V 100A WAFER Infineon Technologies	3992	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	27 µA @ 600 V	600 V	100A (DC)	-40°C ~ 175°C	1.9 V @ 100 A
SF28GHA0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	3306	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
SIDC08D60C8X1SA1 DIODE GEN PURP 600V 30A WAFER Infineon Technologies	2554	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	27 µA @ 600 V	600 V	30A (DC)	-40°C ~ 175°C	1.95 V @ 30 A
SF2L4G A0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	2852	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	1 µA @ 200 V	200 V	2A	-55°C ~ 150°C	950 mV @ 2 A
SIDC04D60F6X1SA4 DIODE SWITCHING 600V WAFER Infineon Technologies	2597	- + Añadir Investigación	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	27 µA @ 600 V	600 V	9A (DC)	-40°C ~ 175°C	1.6 V @ 9 A
SF2L4GHA0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	2431	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	35 ns	1 µA @ 200 V	200 V	2A	-55°C ~ 150°C	950 mV @ 2 A

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