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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SF2L6G B0G DIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation	3636	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	1 µA @ 400 V	400 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
MUR8L60HC0G DIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation	2121	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	-	65 ns	5 µA @ 600 V	600 V	8A	-55°C ~ 175°C	1.3 V @ 8 A
SS26L MHG DIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation	3696	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 60 V	60 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR110HA0G DIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation	2117	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	1A	-55°C ~ 150°C	850 mV @ 1 A
SR502HA0G DIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation	3498	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 125°C	550 mV @ 5 A
S1BL M2G DIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation	3140	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 100 V	100 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF2L6GHB0G DIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation	3207	- + Añadir Investigación	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	1 µA @ 400 V	400 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
MURF10L60 C0G DIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation	2613	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	5 µA @ 600 V	600 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
SS26LHM2G DIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation	3443	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 60 V	60 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR115 A0G DIODE SCHOTTKY 150V 1A DO204AL Taiwan Semiconductor Corporation	3377	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	1A	-55°C ~ 150°C	950 mV @ 1 A
SR503 A0G DIODE SCHOTTKY 30V 5A DO201AD Taiwan Semiconductor Corporation	2554	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	5A	-55°C ~ 125°C	550 mV @ 5 A
S1BL MHG DIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation	2641	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 100 V	100 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF2L8G B0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	3544	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	1 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
MURF8L60 C0G DIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation	3795	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	-	65 ns	5 µA @ 600 V	600 V	8A	-55°C ~ 175°C	1.3 V @ 8 A
SS26LHMHG DIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation	2343	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 60 V	60 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR115HA0G DIODE SCHOTTKY 150V 1A DO204AL Taiwan Semiconductor Corporation	2331	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	1A	-55°C ~ 150°C	950 mV @ 1 A
SR503HA0G DIODE SCHOTTKY 30V 5A DO201AD Taiwan Semiconductor Corporation	2628	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	5A	-55°C ~ 125°C	550 mV @ 5 A
S1BLHM2G DIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation	2144	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 100 V	100 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF2L8GHB0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	2837	- + Añadir Investigación	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	1 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
MURF8L60HC0G DIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation	3753	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	5 µA @ 600 V	600 V	8A	-55°C ~ 175°C	1.3 V @ 8 A

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