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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SF34G B0G DIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation	2448	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF1004G C0G DIODE GEN PURP 200V 10A TO220AB Taiwan Semiconductor Corporation	3036	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS310L MHG DIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation	3836	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
UF1GHA0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	2070	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR515HA0G DIODE SCHOTTKY 150V 5A DO201AD Taiwan Semiconductor Corporation	2842	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	5A	-55°C ~ 150°C	1.05 V @ 5 A
S1GLHM2G DIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation	2002	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 400 V	400 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF34GHB0G DIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation	3482	- + Añadir Investigación	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF1004GHC0G DIODE GEN PURP 200V 10A TO220AB Taiwan Semiconductor Corporation	3405	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS310LHM2G DIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation	2579	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SR520HA0G DIODE SCHOTTKY 200V 5A DO201AD Taiwan Semiconductor Corporation	2678	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	5A	-55°C ~ 150°C	1.05 V @ 5 A
S1GLHMHG DIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation	3656	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 400 V	400 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF35G B0G DIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation	2244	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SF1005GHC0G DIODE GEN PURP 300V 10A TO220AB Taiwan Semiconductor Corporation	2252	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	10A	-55°C ~ 150°C	1.3 V @ 5 A
SS310LHMHG DIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation	2527	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SR802 A0G DIODE SCHOTTKY 20V 8A DO201AD Taiwan Semiconductor Corporation	3880	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 20 V	20 V	8A	-55°C ~ 125°C	550 mV @ 8 A
S1JL MHG DIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation	3820	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF35GHB0G DIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation	3458	- + Añadir Investigación	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
SFAF1002G C0G DIODE GEN PURP 100V 10A ITO220AC Taiwan Semiconductor Corporation	3831	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	170pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	10A	-55°C ~ 150°C	975 mV @ 10 A
SF1006GHC0G DIODE GEN PURP 300V 10A TO220AB Taiwan Semiconductor Corporation	2782	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	10A	-55°C ~ 150°C	1.3 V @ 5 A
SS34L M2G DIODE SCHOTTKY 40V 3A SUB SMA Taiwan Semiconductor Corporation	2414	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 40 V	40 V	3A	-55°C ~ 125°C	500 mV @ 3 A

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