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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SF37GHB0G DIODE GEN PURP 500V 3A DO201AD Taiwan Semiconductor Corporation	3399	- + Añadir Investigación	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	3A	-55°C ~ 150°C	1.7 V @ 3 A
SFAF1004GHC0G DIODE GEN PURP 200V 10A ITO220AC Taiwan Semiconductor Corporation	3526	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	170pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	10A	-55°C ~ 150°C	975 mV @ 10 A
SF1601G C0G DIODE GEN PURP 50V 16A TO220AB Taiwan Semiconductor Corporation	3433	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	16A	-55°C ~ 150°C	975 mV @ 8 A
SS36L M2G DIODE SCHOTTKY 60V 3A SUB SMA Taiwan Semiconductor Corporation	2589	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 60 V	60 V	3A	-55°C ~ 150°C	750 mV @ 3 A
SR804HA0G DIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation	2646	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	8A	-55°C ~ 125°C	550 mV @ 8 A
S1KLHM2G DIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation	3463	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 800 V	800 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF38G B0G DIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation	3377	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 150°C	1.7 V @ 3 A
SFAF1005G C0G DIODE GEN PURP 300V 10A ITO220AC Taiwan Semiconductor Corporation	2494	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
SF1601GHC0G DIODE GEN PURP 50V 16A TO220AB Taiwan Semiconductor Corporation	2339	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	16A	-55°C ~ 150°C	975 mV @ 8 A
SS36L MHG DIODE SCHOTTKY 60V 3A SUB SMA Taiwan Semiconductor Corporation	2215	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 60 V	60 V	3A	-55°C ~ 150°C	750 mV @ 3 A
SR805 A0G DIODE SCHOTTKY 50V 8A DO201AD Taiwan Semiconductor Corporation	2056	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	8A	-55°C ~ 150°C	700 mV @ 8 A
S1KLHMHG DIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation	3636	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 800 V	800 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF38GHB0G DIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation	2013	- + Añadir Investigación	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 150°C	1.7 V @ 3 A
SFAF1005GHC0G DIODE GEN PURP 300V 10A ITO220AC Taiwan Semiconductor Corporation	3156	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
SF1601PT C0G DIODE GEN PURP 50V 16A TO247AD Taiwan Semiconductor Corporation	3740	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	16A	-55°C ~ 150°C	950 mV @ 8 A
SS36LHM2G DIODE SCHOTTKY 60V 3A SUB SMA Taiwan Semiconductor Corporation	3234	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 60 V	60 V	3A	-55°C ~ 150°C	750 mV @ 3 A
SR805HA0G DIODE SCHOTTKY 50V 8A DO201AD Taiwan Semiconductor Corporation	2950	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	8A	-55°C ~ 150°C	700 mV @ 8 A
S1ML MHG DIODE GEN PURP 1000V 1A SUB SMA Taiwan Semiconductor Corporation	3049	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 1000 V	-	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF41G B0G DIODE GEN PURP 50V 4A DO201AD Taiwan Semiconductor Corporation	2392	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	4A	-55°C ~ 150°C	1 V @ 4 A
SFAF1006G C0G DIODE GEN PURP 400V 10A ITO220AC Taiwan Semiconductor Corporation	2816	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	10A	-55°C ~ 150°C	1.3 V @ 10 A

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