Productos - Шэньчжэньская микроэлектронная компания Хунтай

Carrito de compras

Ver todo >>

Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SS29 M4G DIODE SCHOTTKY 90V 2A DO214AA Taiwan Semiconductor Corporation	2252	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1A A0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	2004	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR504HA0G DIODE SCHOTTKY 40V 5A DO201AD Taiwan Semiconductor Corporation	3263	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	5A	-55°C ~ 125°C	550 mV @ 5 A
S1BLHMHG DIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation	2302	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 100 V	100 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF31G B0G DIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation	3721	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF1001G C0G DIODE GEN PURP 50V 10A TO220AB Taiwan Semiconductor Corporation	3698	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS29HM4G DIODE SCHOTTKY 90V 2A DO214AA Taiwan Semiconductor Corporation	3329	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1AHA0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	3549	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR505 A0G DIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation	3760	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 150°C	700 mV @ 5 A
S1DL M2G DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation	2154	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 200 V	200 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF31GHB0G DIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation	3488	- + Añadir Investigación	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF1001GHC0G DIODE GEN PURP 50V 10A TO220AB Taiwan Semiconductor Corporation	2976	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS29L M2G DIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation	2420	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1B A0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	3168	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR505HA0G DIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation	2584	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 150°C	700 mV @ 5 A
S1DL MHG DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation	3413	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 200 V	200 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF32G B0G DIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation	3312	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF1002G C0G DIODE GEN PURP 100V 10A TO220AB Taiwan Semiconductor Corporation	2324	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS29L MHG DIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation	3682	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1BHA0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	3439	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A

Total 50121 Records«Prev 1... 1640 1641 1642 164316441645 1646 1647...2507 Next»

Solicitud de cotización

Teléfono

+86 0755-83238723
Contáctanos
WhatsApp
GoTop