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Photo Mfr. Part # Stock Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SR810 A0G

SR810 A0G

DIODE SCHOTTKY 100V 8A DO201AD

Taiwan Semiconductor Corporation

2670
- +

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Investigación

SR810 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 8A -55°C ~ 150°C 920 mV @ 8 A
S2AA M2G

S2AA M2G

DIODE GEN PURP 50V 1.5A DO214AC

Taiwan Semiconductor Corporation

3046
- +

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Investigación

S2AA M2G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 5 µA @ 50 V 50 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
SF43G B0G

SF43G B0G

DIODE GEN PURP 150V 4A DO201AD

Taiwan Semiconductor Corporation

3218
- +

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Investigación

SF43G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 4A -55°C ~ 150°C 1 V @ 4 A
SFAF1008GHC0G

SFAF1008GHC0G

DIODE GEN PURP 600V 10A ITO220AC

Taiwan Semiconductor Corporation

2954
- +

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Investigación

SFAF1008GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 140pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 10 A
TSSA5U50 M2G

TSSA5U50 M2G

DIODE SCHOTTKY 50V 5A DO214AC

Taiwan Semiconductor Corporation

3116
- +

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Investigación

TSSA5U50 M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 50 V 50 V 5A -55°C ~ 150°C 540 mV @ 5 A
SR810HA0G

SR810HA0G

DIODE SCHOTTKY 100V 8A DO201AD

Taiwan Semiconductor Corporation

2718
- +

Añadir

Investigación

SR810HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 8A -55°C ~ 150°C 920 mV @ 8 A
S2AHM4G

S2AHM4G

DIODE GEN PURP 50V 2A DO214AA

Taiwan Semiconductor Corporation

2240
- +

Añadir

Investigación

S2AHM4G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.15 V @ 2 A
SF43GHB0G

SF43GHB0G

DIODE GEN PURP 150V 4A DO201AD

Taiwan Semiconductor Corporation

3046
- +

Añadir

Investigación

SF43GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 4A -55°C ~ 150°C 1 V @ 4 A
SFAF1601G C0G

SFAF1601G C0G

DIODE GEN PURP 50V 16A ITO220AC

Taiwan Semiconductor Corporation

2512
- +

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Investigación

SFAF1601G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 130pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 16 A
TSSA5U60 M2G

TSSA5U60 M2G

DIODE SCHOTTKY 60V 5A DO214AC

Taiwan Semiconductor Corporation

3422
- +

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Investigación

TSSA5U60 M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 60 V 60 V 5A -55°C ~ 150°C 560 mV @ 5 A
SR815 A0G

SR815 A0G

DIODE SCHOTTKY 150V 8A DO201AD

Taiwan Semiconductor Corporation

3572
- +

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Investigación

SR815 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 8A -55°C ~ 150°C 1.02 V @ 8 A
S2B M4G

S2B M4G

DIODE GEN PURP 100V 2A DO214AA

Taiwan Semiconductor Corporation

3595
- +

Añadir

Investigación

S2B M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.15 V @ 2 A
SF44G B0G

SF44G B0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

3258
- +

Añadir

Investigación

SF44G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 4A -55°C ~ 150°C 1 V @ 4 A
SFAF1601GHC0G

SFAF1601GHC0G

DIODE GEN PURP 50V 16A ITO220AC

Taiwan Semiconductor Corporation

3504
- +

Añadir

Investigación

SFAF1601GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 130pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 16 A
US1A M2G

US1A M2G

DIODE GEN PURP 50V 1A DO214AC

Taiwan Semiconductor Corporation

3746
- +

Añadir

Investigación

US1A M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SR815HA0G

SR815HA0G

DIODE SCHOTTKY 150V 8A DO201AD

Taiwan Semiconductor Corporation

2217
- +

Añadir

Investigación

SR815HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 8A -55°C ~ 150°C 1.02 V @ 8 A
S2BHM4G

S2BHM4G

DIODE GEN PURP 100V 2A DO214AA

Taiwan Semiconductor Corporation

3849
- +

Añadir

Investigación

S2BHM4G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.15 V @ 2 A
SF44GHB0G

SF44GHB0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

2595
- +

Añadir

Investigación

SF44GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 4A -55°C ~ 150°C 1 V @ 4 A
SFAF1602G C0G

SFAF1602G C0G

DIODE GEN PURP 100V 16A ITO220AC

Taiwan Semiconductor Corporation

3426
- +

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Investigación

SFAF1602G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 130pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 16A -55°C ~ 150°C 975 mV @ 16 A
US1AHM2G

US1AHM2G

DIODE GEN PURP 50V 1A DO214AC

Taiwan Semiconductor Corporation

3346
- +

Añadir

Investigación

US1AHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
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