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Mfr. Part #	Stock	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SF1601PTHC0G DIODE GEN PURP 50V 16A TO247AD Taiwan Semiconductor Corporation	2901	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	16A	-55°C ~ 150°C	950 mV @ 8 A
SS36LHMHG DIODE SCHOTTKY 60V 3A SUB SMA Taiwan Semiconductor Corporation	2058	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 60 V	60 V	3A	-55°C ~ 150°C	750 mV @ 3 A
SR806HA0G DIODE SCHOTTKY 60V 8A DO201AD Taiwan Semiconductor Corporation	3586	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	8A	-55°C ~ 150°C	700 mV @ 8 A
S1MLHM2G DIODE GEN PURP 1000V 1A SUB SMA Taiwan Semiconductor Corporation	3755	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 1000 V	-	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF41GHB0G DIODE GEN PURP 50V 4A DO201AD Taiwan Semiconductor Corporation	2019	- + Añadir Investigación	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	4A	-55°C ~ 150°C	1 V @ 4 A
SFAF1006GHC0G DIODE GEN PURP 400V 10A ITO220AC Taiwan Semiconductor Corporation	2831	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
SF1602G C0G DIODE GEN PURP 100V 16A TO220AB Taiwan Semiconductor Corporation	2096	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	16A	-55°C ~ 150°C	975 mV @ 8 A
TSN520M60 S4G DIODE GEN PURP 60V 20A 8PDFN Taiwan Semiconductor Corporation	3990	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	500 µA @ 60 V	60 V	20A	-55°C ~ 150°C	580 mV @ 20 A
SR809 A0G DIODE SCHOTTKY 90V 8A DO201AD Taiwan Semiconductor Corporation	3659	- + Añadir Investigación	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	8A	-55°C ~ 150°C	920 mV @ 8 A
S1MLHMHG DIODE GEN PURP 1000V 1A SUB SMA Taiwan Semiconductor Corporation	2324	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 1000 V	-	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF42G B0G DIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation	2644	- + Añadir Investigación	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	4A	-55°C ~ 150°C	1 V @ 4 A
SFAF1007G C0G DIODE GEN PURP 500V 10A ITO220AC Taiwan Semiconductor Corporation	2248	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	10A	-55°C ~ 150°C	1.7 V @ 10 A
SF1602GHC0G DIODE GEN PURP 100V 16A TO220AB Taiwan Semiconductor Corporation	3307	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	16A	-55°C ~ 150°C	975 mV @ 8 A
TSN525M60 S4G DIODE GEN PURP 60V 25A 8PDFN Taiwan Semiconductor Corporation	3794	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	500 µA @ 60 V	60 V	25A	-55°C ~ 150°C	630 mV @ 25 A
SR809HA0G DIODE SCHOTTKY 90V 8A DO201AD Taiwan Semiconductor Corporation	3046	- + Añadir Investigación	Datasheet	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	8A	-55°C ~ 150°C	920 mV @ 8 A
S2A M4G DIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation	3849	- + Añadir Investigación	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	30pF @ 4V, 1MHz	1.5 µs	1 µA @ 50 V	50 V	2A	-55°C ~ 150°C	1.15 V @ 2 A
SF42GHB0G DIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation	2107	- + Añadir Investigación	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	4A	-55°C ~ 150°C	1 V @ 4 A
SFAF1007GHC0G DIODE GEN PURP 500V 10A ITO220AC Taiwan Semiconductor Corporation	2986	- + Añadir Investigación	Datasheet	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	10A	-55°C ~ 150°C	1.7 V @ 10 A
SF1602PT C0G DIODE GEN PURP 100V 16A TO247AD Taiwan Semiconductor Corporation	2612	- + Añadir Investigación	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	85pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	16A	-55°C ~ 150°C	950 mV @ 8 A
TSN525M60HS4G DIODE GEN PURP 60V 25A 8PDFN Taiwan Semiconductor Corporation	2101	- + Añadir Investigación	Datasheet	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	500 µA @ 60 V	60 V	25A	-55°C ~ 150°C	630 mV @ 25 A

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